Ny prototype-chip til 3G-mobiler fra Samsung

[Dinsdale]

Samsung Electronics says that it has completed the world's first working prototype of a 512Mb mobile DRAM device that operates up to 333Mbps, transmitting 32 bits of data simultaneously. This memory chip is fast enough to support high-quality 3D graphics and streaming video in next-generation mobile phones.

 

Two of the new 512Mb mobile DRAMs can be stacked together to provide a one-gigabit memory capacity, opening up new possibilities for mobile storage.

 

Powered by just 1.8 volts, the high-bandwidth Samsung chip is available in double data rate (DDR) and synchronous DRAM (SDRAM) formats to work with as many data transmission systems as possible. Samsung also will develop versions of the 512Mb mobile memory for its multi-chip packages (MCPs) and system-in-a-package (SIP) devices.

 

 

Fremtiden er flott dere

 

Kilde